24 Db Bi- Directional Digital Amplifier Ace Hardware

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KU PA BB 003055-100 A, RF Power Amplifier

  • Frequency range
  • xxx..550 MHz
  • Output power P3dB
  • typ. 100 Westward, min. 80 W (CW)
  • Gain (small signal)
  • typ. 49 dB, min. 47 dB
  • Supply voltage
  • +28 V DC

  • Frequency range
  • xxx..3500 MHz
  • Saturation power
  • min. 15 Due west (30 ... 2500 MHz)
  • Gain (small-scale signal)
  • min. 45 dB
  • Supply voltage
  • +18 ... 36 V DC

KU PA BB 005090-six A - RF Power Amplifier

  • Frequency range
  • fifty..900 MHz
  • Output power P1dB
  • typ. 6 West, min. 5 W (CW) (fifty ... 500 MHz)
  • Gain (small signal)
  • min. 31.5 dB
  • Supply voltage
  • +28 Five DC

KU PA BB 005250-2 A, RF Broadband Amplifier

  • Frequency range
  • fifty..2500 MHz
  • Output power P1dB
  • typ. 2 Westward, min. 1.8 Due west (CW)
  • Gain (small signal)
  • typ. 33 dB, min. 31 dB
  • Supply voltage
  • +24 ... 26 Five DC

KU PA BB 005300-3 A, RF Broadband Power Amplifier

  • Frequency range
  • 50..3000 MHz
  • Output power P1dB
  • min. 3 W CW (50 ... 2000 MHz)
  • Gain (small signal)
  • min. 30 dB
  • Supply voltage
  • +24 ... 26 V DC

KU PA 014018-l HY, RF Power Amplifier

  • Frequency range
  • 140..180 MHz
  • Output power P3dB
  • typ. l W, min. 45 West
  • Gain (small signal)
  • typ. 36 dB, min. 34 dB
  • Supply voltage
  • +12 ... xiv Five DC

KU PA 013017-100 HY, RF Power Amplifier

  • Frequency range
  • 130..170 MHz
  • Output power P1dB
  • typ. 50 W, min. 30 W (CW)
  • Gain (small signal)
  • typ. forty dB, min. 35 dB
  • Supply voltage
  • +12 ... 14 V DC

  • Frequency range
  • 260..260 MHz
  • Output power P1dB
  • min. 850 W (CW)
  • Dimensions (mm)
  • 3 HE, 350 mm depth
  • 5 HE, 450 mm deep

KU PA 040048-sixty HY, UHF MOSFET-Power Amplifier

  • Frequency range
  • 400..480 MHz
  • Output ability P1dB
  • min. 20 Westward (CW)
  • Gain (small indicate)
  • min. 34 dB
  • Supply voltage
  • +12 ... 14 5 DC

KU PA 040048-100 HY, UHF power amplifier

  • Frequency range
  • 400..480 MHz
  • Output power P1dB
  • min. 30 W (CW)
  • Proceeds (small signal)
  • min. 34 dB
  • Supply voltage
  • +12 ... 14 5 DC

KU PA 040050-seven HY, MOSFET Power Amplifier

  • Frequency range
  • 400..500 MHz
  • Gain (small signal)
  • min. 23 dB
  • Supply voltage
  • +12 ... 14 V DC

KU PA BB 070270-80 A-2.1.ane, Power Amplifier

  • Frequency range
  • 600..2700 MHz
  • Saturation power
  • min. 80 Westward
  • Gain (pocket-size signal)
  • typ. 52 dB
  • Supply voltage
  • + 32 V DC

Radio frequency (RF) and microwave power amplifiers (PAs) are electronic circuits used for the amplification of low power radio frequency signals to loftier power levels. The most common application of such high-power RF signals is driving of transmit antennas in wireless communications. Since the RF signals are attenuated as they propagate through space, wireless coverage of large areas or wide-range point-to-point connections often require large amounts of transmit ability. Another awarding of high-power RF signals is the generation of stiff electromagnetic fields in various types of cavities, where they are used for technical and physical processes like microwave heating, plasma generation, particle acceleration, or in test and measurement setups for EMC tests and characterization of RF and microwave components. Technical applications requiring high RF ability levels range from microwave cooking to the handling and finishing of materials and surfaces as well as medical appliances and optics. The characteristic performance criteria of RF power amplifiers include frequency, RF bandwidth, video bandwidth, maximum output power, energy efficiency and linearity. With his choice of an appropriate power amplifier excursion topology and active device applied science (LDMOS, GaN / GaAs HEMT, InGaP HBT, etc…), the RFPA designer tries to find the best possible balance betwixt these, often conflicting, operation criteria, based on the requirements of a given application. For instance, a Class A amplifier can be highly linear, generates little harmonics and is rather robust, merely is very inefficient on the other hand. It is chosen for applications that need very high linearity and/or very high bandwidth. In contrast, the Class AB amplifier can exist fabricated far more efficient simply volition not be as linear as the Grade A amplifier. Information technology is best suited for applications that need moderate linearity and bandwidth but benefit from its high efficiency. For applications that require both loftier linearity and high efficiency, the Course AB amplifier can be linearized using analogue, digital or hybrid predistortion techniques. In very demanding applications similar cellular mobile radio or digital terrestrial television broadcast, more than sophisticated circuit topologies like the Doherty PA are unremarkably used to farther increase the boilerplate efficiency of the transmitter concatenation while maintaining high linearity. Due to the scarcity of wireless spectrum and the subsequent need for efficient spectrum usage, the wireless communications field is dominated by modulation formats that impose strict linearity requirements on the power amplifier. In contrast to that, the high-power RF signal generators used in technical applications unremarkably generate constant envelope signals at stock-still frequencies and thus do not rely on loftier linearity power amplifiers. Under such weather, switched mode power amplifiers tin be used. Past operating the active devices in saturation and application of waveform shaping techniques, these nonlinear power amplifiers enable very high energy efficiencies of upwardly to 80% and more.

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